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ElecSuper DMN2056U-7(ES) product image
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ElecSuper DMN2056U-7(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMN2056U-7(ES)
LCSC Part #
C54533329
Packaging
SOT-23
Customer #
Key Attributes
20V 4A 750mV 1.2W 25mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper DMN2056U-7(ES)
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0457$ 0.46
100+$ 0.0364$ 3.64
300+$ 0.0318$ 9.54
3,000+$ 0.0283$ 84.90
6,000+$ 0.0255$ 153.00
9,000+$ 0.0241$ 216.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation1.2W
RDS(on)25mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)470pF
Gate Charge(Qg)6nC
Vgs±12V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMN2056U-7(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-resistance RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMN2056U-7(ES) is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 25mΩ (typical), VGS = 4.5V
  • RDS(ON) = 29mΩ (typical), VGS = 2.5V
  • High-density cell design for low RDS(on)
  • Material: Halogen-free
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion