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ElecSuper AONS32310(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
AONS32310(ES)
LCSC Part #
C54533296
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
30V 180A 1.6V 1.15mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper AONS32310(ES)
In-Stock: 199
199 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.3564$ 0.36
10+$ 0.3484$ 3.48
30+$ 0.3435$ 10.31
100+$ 0.3387$ 33.87
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Drain to Source Voltage30V
Output Capacitance(Coss)1.757nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)98pF
Number1 N-channel
Input Capacitance(Ciss)3.1nF
Gate Charge(Qg)44nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

AONS32310(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent on-resistance (RDS(ON)) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product AONS32310(ES) is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 1.15mΩ (typical), gate-source voltage VGS = 10V
  • RDS(ON) = 1.65mΩ (typical), gate-source voltage VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Material: halogen-free
  • Reliable and durable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion