KUU AO3413
| Manufacturer | KUUAsian Brands |
| MPN | AO3413 |
| LCSC Part # | C54443144 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 1.4W 20V 3A 1.1V 56mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 80pF | |
| Pd - Power Dissipation | 1.4W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 56mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 8.5nC | |
| Vgs | ±8V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using advanced trenchAO3413 technology, this device offers excellent on-resistance RDS(ON), low gate charge, and operates at gate voltages as low as 1.8V. It is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- TrenchFET Power MOSFET
- Marking: A39T
In-Stock: 3,000
3,000 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0376 | $ 0.75 |
| 200+ | $ 0.03 | $ 6.00 |
| 600+ | $ 0.0262 | $ 15.72 |
| 3,000+ | $ 0.0233 | $ 69.90 |
| 9,000+ | $ 0.021 | $ 189.00 |
| 21,000+ | $ 0.0199 | $ 417.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KUU | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 80pF | |
| Pd - Power Dissipation | 1.4W | |
| Drain to Source Voltage | 20V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 56mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 8.5nC | |
| Vgs | ±8V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using advanced trenchAO3413 technology, this device offers excellent on-resistance RDS(ON), low gate charge, and operates at gate voltages as low as 1.8V. It is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- TrenchFET Power MOSFET
- Marking: A39T
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



