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DOINGTER DE200PG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DE200PG |
| LCSC Part # | C54428036 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 60V 10A 96W 155mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs |
| Datasheet | DOINGTER DE200PG |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 500pF | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 500pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (R DS(on)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -60V, ID = -10A, RDS(ON) < 200mΩ (typical 155mΩ at VGS = -10V)
- Low gate charge
- Eco-friendly devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
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In-Stock: 1,595
1,595 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0886 | $ 0.44 |
| 50+ | $ 0.0706 | $ 3.53 |
| 150+ | $ 0.0616 | $ 9.24 |
| 500+ | $ 0.0548 | $ 27.40 |
| 2,500+ | $ 0.0494 | $ 123.50 |
| 5,000+ | $ 0.0467 | $ 233.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 500pF | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 500pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (R DS(on)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -60V, ID = -10A, RDS(ON) < 200mΩ (typical 155mΩ at VGS = -10V)
- Low gate charge
- Eco-friendly devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
C54428036 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |