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DOINGTER DJ150TG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DJ150TG |
| LCSC Part # | C54428028 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 200V 20A 136W 115mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs |
| Datasheet | DOINGTER DJ150TG |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 550pF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 550pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 200V, ID = 20A, RDS(ON) < 150mΩ @ VGS = 10V (typical: 115mΩ)
- Low gate charge
- Green devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
- MSL3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 2,390
2,390 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2508 | $ 1.25 |
| 50+ | $ 0.1986 | $ 9.93 |
| 150+ | $ 0.1763 | $ 26.45 |
| 500+ | $ 0.1484 | $ 74.20 |
| 2,500+ | $ 0.136 | $ 340.00 |
| 5,000+ | $ 0.1286 | $ 643.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 550pF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 550pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 200V, ID = 20A, RDS(ON) < 150mΩ @ VGS = 10V (typical: 115mΩ)
- Low gate charge
- Green devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
- MSL3
C54428028 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| DO150DFSG | DOINGTER | Similar | TO-252 | 101 | $ 1.1521 | ||
| FDD18N20LZ-DO | DOINGTER | Similar | TO-252 | 735 | $ 0.2719 | ||
| FQD16N25CTM-DO | DOINGTER | Similar | TO-252 | 230 | $ 0.2666 | ||
| DJ18NFG | DOINGTER | Similar | TO-252 | 1,100 | $ 0.2392 |