DOINGTER NH012T2G-L

Manufacturer	DOINGTERAsian Brands
MPN	NH012T2G-L
LCSC Part #	C54300819
Packaging	DFN-8(5x6)
Customer #
Key Attributes	78W 100V 55A 1.7V 8.8mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS
Datasheet	DOINGTER NH012T2G-L

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	DOINGTER
Packaging	DFN-8(5x6)
Output Capacitance(Coss)	882pF
Pd - Power Dissipation	78W
Configuration	-
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	55A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Reverse Transfer Capacitance (Crss@Vds)	31pF
RDS(on)	8.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.5nF
Gate Charge(Qg)	26nC
Vgs	±20V
Type	N-Channel

In-Stock: 460

460 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
5+	$ 0.1187	$ 0.59
50+	$ 0.1161	$ 5.81
150+	$ 0.1143	$ 17.15
500+	$ 0.1126	$ 56.30
Standard Packaging5000/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	DOINGTER
Packaging	DFN-8(5x6)
Output Capacitance(Coss)	882pF
Pd - Power Dissipation	78W
Configuration	-
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	55A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Reverse Transfer Capacitance (Crss@Vds)	31pF
RDS(on)	8.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.5nF
Gate Charge(Qg)	26nC
Vgs	±20V
Type	N-Channel