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VBsemi Elec IPD60R380C6-VB

Hersteller
VBsemi ElecAsian Brands
Herst.-Teilenr.
IPD60R380C6-VB
LCSC-Nr.
C54177109
Verp.
TO-252
Kundennummer
Hauptmerkm.
650V 11A 83W 420mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs
DatenblattVBsemi Elec IPD60R380C6-VB
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerVBsemi Elec
Verp.TO-252
Drain to Source Voltage650V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)11A
Output Capacitance(Coss)140pF
Ciss-Input Capacitance680pF
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss)5pF
RDS(on)420mΩ@10V
Number1 N-channel
Gate Charge(Qg)38nC
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Merkmale

KI-Übersetzung
  • Low figure of merit (FOM): Ron × Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra-low gate charge (Qg)
  • Avalanche energy rated (UIS)

Anwendungen

KI-Übersetzung
  • Server and telecom power supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • Lighting
    • High Intensity Discharge (HID)
    • Fluorescent ballast lighting
  • Industrial applications