VBsemi Elec FDP15N50-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | FDP15N50-VB |
| Cod. LCSC | C54177022 |
| Imballo | TO-220AB |
| Numero Cliente | |
| Attr. chiave | 650V 18A 208W 340mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs |
| Scheda Tecnica | VBsemi Elec FDP15N50-VB |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Reduced trr, Qrr, and IRRM
- Low figure of merit (FOM) R(on)×Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Reduced trr, Qrr, and IRRM
- Low figure of merit (FOM) R(on)×Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
C54177022 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

