Abbildung ähnlich
EDA-ModelleEasyEDA
VBsemi Elec 2SK1378-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | 2SK1378-VB |
| LCSC-Nr. | C54176935 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | 650V 18A 208W 340mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs |
| Datenblatt | VBsemi Elec 2SK1378-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Reduced reverse recovery time (trr), reverse recovery charge (Qrr), and peak reverse recovery current (IRRM)
- Low figure of merit (FOM): on-resistance (Ron) × gate charge (Qg)
- Low input capacitance (Ciss)
- Low switching losses due to reduced reverse recovery charge (Qrr)
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.0652 | $ 2.07 |
| 200+ | $ 0.8242 | $ 164.84 |
| 500+ | $ 0.7972 | $ 398.60 |
| 1,000+ | $ 0.7828 | $ 782.80 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-220AB | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 456pF | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 4.826nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 340mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Reduced reverse recovery time (trr), reverse recovery charge (Qrr), and peak reverse recovery current (IRRM)
- Low figure of merit (FOM): on-resistance (Ron) × gate charge (Qg)
- Low input capacitance (Ciss)
- Low switching losses due to reduced reverse recovery charge (Qrr)
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
C54176935 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| AOT13N50-VB | VBsemi Elec | Ähnliche | TO-220AB | 59 | $1.1696 $1.376 | ||
| AOT12N50-VB | VBsemi Elec | Ähnliche | TO-220AB | 10 | $1.2430 $1.4623 | ||
| STP10NM65N-VB | VBsemi Elec | Ähnliche | TO-220AB | 20 | $1.2575 $1.4794 | ||
| IKP15N60T-VB | VBsemi Elec | Ähnliche | TO-220AB | 5 | $1.2646 $1.4877 | ||
| STP19NM50N-VB | VBsemi Elec | Ähnliche | TO-220AB | 5 | $ 3.3786 |