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Infineon IPW65R080CFDARoHS

Manufacturer
Infineon
MPN
IPW65R080CFDA
LCSC Part #
C537490
Packaging
TO-247
Customer #
Key Attributes
MOSFET 650V 43.3A TO-247
Datasheetpdf iconInfineon IPW65R080CFDA
In-Stock: 221
221 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 11.7072$ 6.0878$ 6.09
10+$ 11.557$ 6.0097$ 60.10
30+$ 11.2972$ 5.8746$ 176.24
90+$ 11.0703$ 5.7566$ 518.09
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247
Drain to Source Voltage650V
Current - Continuous Drain(Id)43.3A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation391W
Reverse Transfer Capacitance (Crss@Vds)754pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.44nF
Gate Charge(Qg)161nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

CoolMos tm is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOS TM CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.

Features

AI Translation
  • Utra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM Rdson*Qg and Eoss
  • Easy to use/drive
  • Qualified according to AEC Q101
  • Green package (RoHS compliant), Pb-free plating, halogen free for mold compound

Applications

AI Translation
  • 650V CoolMOS TM CFDA is designed for switching applications.