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DIODES DMN63D8LDW-13RoHS

Manufacturer
DIODES
MPN
DMN63D8LDW-13
LCSC Part #
C5366073
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH ARR 30V 260mA SOT-363
Datasheetpdf iconDIODES DMN63D8LDW-13
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0435$ 0.44
100+$ 0.0426$ 4.26
300+$ 0.042$ 12.60
1,000+$ 0.0414$ 41.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)260mA
RDS(on)2.8Ω@10V
Pd - Power Dissipation300mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)22pF
Gate Charge(Qg)870pC
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.