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HGSEMI AT24C16N-852 product image
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HGSEMI AT24C16N-852RoHS

Manufacturer
HGSEMIAsian Brands
MPN
AT24C16N-852
LCSC Part #
C53468220
Packaging
DIP-8
Customer #
Key Attributes
16Kbit 1.7V~5.5V I2C DIP-8 Memory (ICs) RoHS
Datasheetpdf iconHGSEMI AT24C16N-852
In-Stock: 2,000
2,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1521$ 0.76
50+$ 0.1201$ 6.01
150+$ 0.1063$ 15.95
500+$ 0.0892$ 44.60
2,000+$ 0.0816$ 163.20
4,000+$ 0.077$ 308.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerHGSEMI
PackagingDIP-8
Memory Size16Kbit
Voltage - Supply1.7V~5.5V
Operating temperature-40℃~+85℃
Clock Frequency400kHz;1MHz
Data Retention - TDR (Year)100 Years
FeaturesHardware write protection function;Built-in power-on reset (POR);Noise suppression function
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceI2C

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

AT24C08/AT24C16 are I²C-compatible serial EEPROM devices featuring an 8 Kbits (1 Kbytes) / 16 Kbits (2 Kbytes) memory array with 16-byte pages.

Features

AI Translation
  • Single supply voltage and high-speed mode
  • Minimum operating voltage down to 1.7V
  • 400kHz/1MHz clock from 1.7V to 5.5V
  • Low-power CMOS technology
  • Read current 0.2mA (400kHz, typical)
  • Write current 0.8mA (400kHz, typical)
  • Schmitt trigger with filtered inputs for noise suppression
  • Sequential and random read capability
  • Page write mode with partial page write support
  • Write protection for entire memory array
  • Additional writeable lockable page
  • Self-timed write cycle (5ms max)
  • High reliability
  • Endurance: 1 million write cycles
  • Data retention: 100 years
  • HBM ESD: 4kV
  • Latch-up immunity: ±200mA (25°C)
  • Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8