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MSKSEMI NTR4003NT1G-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
NTR4003NT1G-MS
LCSC Part #
C5343309
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 500mA SOT-23
Datasheetpdf iconMSKSEMI NTR4003NT1G-MS
In-Stock: 1,060
1,060 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0381$ 0.0324$ 0.32
100+$ 0.0301$ 0.0256$ 2.56
300+$ 0.0261$ 0.0222$ 6.66
3,000+$ 0.0231$ 0.0197$ 59.10
6,000+$ 0.0207$ 0.0176$ 105.60
9,000+$ 0.0196$ 0.0167$ 150.30
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)7.8pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25.5pF
Gate Charge(Qg)3.7nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.

Features

AI Translation
  • 30V, 0.5A, RDS(ON) = 1.0Ω (@VGS = 10V)
  • Improved dv/dt capability
  • Fast switching
  • Green devices available
  • Built-in G-S ESD protection diode
  • ESD protection up to 2KV

Applications

AI Translation
  • Motor drive
  • Power tools
  • LED lighting