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MSKSEMI BSS138LT1G-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSS138LT1G-MS
LCSC Part #
C5343308
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 55V 300mA SOT-23
Datasheetpdf iconMSKSEMI BSS138LT1G-MS
In-Stock: 120
120 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0312$ 0.0266$ 0.53
200+$ 0.0245$ 0.0209$ 4.18
600+$ 0.0208$ 0.0177$ 10.62
3,000+$ 0.0185$ 0.0158$ 47.40
9,000+$ 0.0166$ 0.0142$ 127.80
21,000+$ 0.0155$ 0.0132$ 277.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Configuration-
Drain to Source Voltage55V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)7.8pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25.5pF
Gate Charge(Qg)3.7nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.

Features

AI Translation
  • 55V, 0.3A, R DS(ON) = 1.2Ω at VGS = 10V
  • Improved dv/dt capability
  • Fast switching
  • RoHS-compliant devices available
  • Built-in G-S ESD protection diode
  • ESD protection up to 2KV

Applications

AI Translation
  • Motor Drive - Power Tools - LED Lighting