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Infineon BSC028N06LS3 GRoHS

Manufacturer
Infineon
MPN
BSC028N06LS3 G
LCSC Part #
C534316
Packaging
TDSON-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 100A TDSON-8(5x6)
Datasheetpdf iconInfineon BSC028N06LS3 G
In-Stock: 64
64 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0452$ 1.05
10+$ 0.8521$ 8.52
30+$ 0.7548$ 22.64
100+$ 0.659$ 65.90
500+$ 0.6016$ 300.80
1,000+$ 0.5729$ 572.90
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTDSON-8(5x6)
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)2.3nF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

LPM3414 is an N-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications, notebook computer power management, and other battery-powered circuits requiring high-side switching.

Features

AI Translation
  • High-frequency switching and synchronous rectification
  • Technology optimized for DC/DC converters
  • Excellent gate charge × RDS(ON) product (figure of merit FOM)
  • Ultra-low on-resistance RDS(on)
  • Superior thermal resistance
  • N-channel, logic level
  • 100% avalanche tested
  • Lead-free plating; RoHS compliant
  • JEDEC qualified for target applications
  • Halogen-free per IEC61249-2-21

Applications

AI Translation
  • Portable media players/MP3 players
  • Mobile phones and smartphones
  • LCD displays
  • Digital SLR camera sensors
  • Wireless network cards