Infineon BSC010NE2LSI
| Manufacturer | |
| MPN | BSC010NE2LSI |
| LCSC Part # | C534282 |
| Packaging | TDSON-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 100A TDSON-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 1.05mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.6nF | |
| Gate Charge(Qg) | 59nC@12V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Optimized for high-performance buck converters
- Monolithically integrated quasi-Schottky diode
- Ultra-low on-resistance R D S ( o n ) ~ @ ~ V G S = 4.5 ~ V
- 100% avalanche tested
- N-channel
- JEDEC standard compliant for target applications^1)
- Lead-free lead finish; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
In-Stock: 1,963
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2598 | $ 1.26 |
| 10+ | $ 1.0366 | $ 10.37 |
| 30+ | $ 0.9138 | $ 27.41 |
| 100+ | $ 0.775 | $ 77.50 |
| 500+ | $ 0.7128 | $ 356.40 |
| 1,000+ | $ 0.6841 | $ 684.10 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| RDS(on) | 1.05mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.6nF | |
| Gate Charge(Qg) | 59nC@12V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Optimized for high-performance buck converters
- Monolithically integrated quasi-Schottky diode
- Ultra-low on-resistance R D S ( o n ) ~ @ ~ V G S = 4.5 ~ V
- 100% avalanche tested
- N-channel
- JEDEC standard compliant for target applications^1)
- Lead-free lead finish; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
C534282 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



