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TOSHIBA TK62N60W,S1VF product image
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TOSHIBA TK62N60W,S1VF

Manufacturer
MPN
TK62N60W,S1VF
LCSC Part #
C5340742
Packaging
TO-247
Customer #
Key Attributes
600V 61.8A 3.7V 400W 40mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS
DatasheetTOSHIBA TK62N60W,S1VF
Alternative Parts10
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QtyUnit Price(Reference Only)Total Amount
1+$ 8.8884$ 8.89
30+$ 7.8275$ 234.83
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTO-247
Drain to Source Voltage600V
Current - Continuous Drain(Id)61.8A
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation400W
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
Gate Charge(Qg)180nC@10V

Introduction

AI Translation

AGM403Q combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low drain-to-source on-resistance (RDS(ON)). The device is ideally suited for load switching and battery protection applications.

Features

AI Translation
  • Low drain-source on-resistance: R<sub>DS(ON)</sub> = 0.033Ω (typ.) with super junction DTMOS structure
  • Easy gate switching control
  • Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 3.1 mA)

Applications

AI Translation
  • Switching Regulator

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
WGA65R041WWild GooseTO-24735$ 3.8244
SP77MF65TFSiliupTO-247123$3.6748 $4.5934
MMQ60R044RFTHMagnaChip SemiconTO-247206$ 2.9241
STW68N60M6STTO-247-35$ 30.6128
WTM80N65FMPWPMtekTO-247-3L2$ 6.3335
TK62N60X,S1FTOSHIBATO-2470$ 13.387
TK62N60W5,S1VF(STOSHIBATO-247-30$ 5.6315
X40N65JEFHA3XYDTO-247-3L0$ 9.1381
GSW77N65EFXCHTO-2470$ 7.2472
IPW60R045CPAInfineonTO-247-30$ 23.3605