HXY MOSFET NTD25P03LG-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NTD25P03LG-HXY
LCSC Part #	C5337193
Packaging	TO-252-2L
Customer #
Key Attributes	30V 20A 2.5V 29W 38mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NTD25P03LG-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	194pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	29W
Reverse Transfer Capacitance (Crss@Vds)	158pF
RDS(on)	38mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	1.345nF
Gate Charge(Qg)	12.5nC@4.5V
Type	P-Channel

In-Stock: 42

42 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.3005	$ 0.30
10+	$ 0.2514	$ 2.51
30+	$ 0.2303	$ 6.91
100+	$ 0.2041	$ 20.41
500+	$ 0.1924	$ 96.20
1,000+	$ 0.1795	$ 179.50
Standard Packaging3000/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	194pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	29W
Reverse Transfer Capacitance (Crss@Vds)	158pF
RDS(on)	38mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	1.345nF
Gate Charge(Qg)	12.5nC@4.5V
Type	P-Channel