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HXY MOSFET TPD4E05U06DQAR product image
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HXY MOSFET TPD4E05U06DQARRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
TPD4E05U06DQAR
LCSC Part #
C5337182
Packaging
DFN2510-10L
Customer #
Key Attributes
ESD DIODE 3.3VWM 15VC DFN2510-10L
Datasheetpdf iconHXY MOSFET TPD4E05U06DQAR
In-Stock: 460
460 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0995$ 0.50
50+$ 0.0792$ 3.96
150+$ 0.0691$ 10.37
500+$ 0.0615$ 30.75
3,000+$ 0.0528$ 158.40
6,000+$ 0.0498$ 298.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingDFN2510-10L
Clamping Voltage15V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)5A
Peak Pulse Power Dissipation (Ppp)150W
Number of ChannelsFour channels
Voltage - Breakdown6V
typeESD
Reverse Leakage Current (Ir)1uA
PolarityUnidirectional
Reverse Stand-Off Voltage (Vrwm)3.3V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

TPD4E05U06DQAR is a 4-channel ultra-low capacitance rail-clamp ESD protection diode array. Each channel consists of a pair of diodes that steer positive or negative ESD current to the positive or negative rail. A Zener diode is integrated in the array between the positive and negative supply rails. In a typical application, the negative rail pin (designated as GND) is connected to system ground. Positive ESD current is steered to ground through the ESD diodes and Zener diode, and positive ESD voltage is clamped to the Zener voltage.

Features

AI Translation
  • Solid-state silicon avalanche technology
  • Low working and clamping voltage
  • Up to four I/O line protection
  • Ultra-low capacitance: typical 0.5pF (I/O to I/O)
  • Low leakage
  • Low operating voltage: 3.3V
  • Feed-through design
  • DFN2510 - 10L (USON - 10(1x2.5))