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Nexperia PDTC114ET-QRRoHS

Manufacturer
MPN
PDTC114ET-QR
LCSC Part #
C5336794
Packaging
SOT-23
Customer #
Key Attributes
50 V, 100 mA NPN resistor-equipped transistor
Datasheetpdf iconNexperia PDTC114ET-QR
In-Stock: 3,455
3,455 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0871$ 0.44
50+$ 0.0684$ 3.42
150+$ 0.0591$ 8.87
500+$ 0.0521$ 26.05
3,000+$ 0.0441$ 132.30
6,000+$ 0.0413$ 247.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
ManufacturerNexperia
PackagingSOT-23
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Emitter-Base Voltage VEBO10V
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Number1 NPN (Pre-Biased)
Resistor Ratio1
typeNPN
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)2.5V@10mA,0.3V
Voltage - Input(Max)(VI(off))800mV@100uA,5V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET-Q

Features

AI Translation
  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

AI Translation
  • Digital application in automotive and industrial segments
  • Cost-saving alternative for BC847-Q series in digital applications
  • Controlling IC inputs
  • Switching loads