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RENESAS AT45DB041E-SHNHA-T
| Manufacturer | |
| MPN | AT45DB041E-SHNHA-T |
| LCSC Part # | C5334568 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | Serial Peripheral Interface Compatible Memory with Flexible Programming and Erase Options |
| Datasheet | RENESAS AT45DB041E-SHNHA-T |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | RENESAS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 30ms@(2KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.5ms | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | RENESAS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 30ms@(2KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.5ms | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Single 1.65 V
- 3.6 V supply
- Serial Peripheral Interface (SPI) compatible
- Supports SPI modes 0 and 3
- Supports RapidS™ operation
- Continuous read capability through entire array
- Up to 85 MHz
- Low-power read option up to 15 MHz
- Clock-to-output time (tV) of 6 ns maximum
- User-configurable page size
- 256 bytes per page
- 264 bytes per page (default)
- Page size can be factory pre-configured for 256 bytes
- Two fully independent SRAM data buffers (256/264 bytes)
- Allows receiving data while reprogramming the main memory array
- Flexible programming options
- Byte/Page Program (1 to 256/264 bytes) directly into main memory
- Buffer Write
- Buffer to Main Memory Page Program
- Flexible erase options
- Page Erase (256/264 bytes)
- Block Erase (2 kB)
- Sector Erase (64 kB)
- Chip Erase (4 Mbits)
- Program and Erase Suspend/Resume
- Advanced hardware and software data protection features
- Individual sector protection
- Individual sector lockdown to make any sector permanently read-only
- 128-byte, One-Time Programmable (OTP) Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
- Hardware and software controlled reset options
- JEDEC Standard Manufacturer and Device ID Read
- Low-power dissipation
- 400 nA Ultra-Deep Power-Down current (typical)
- 3 µA Deep Power-Down current (typical)
- 25 µA Standby current (typical)
- 7mA Active Read current (typical @ 15 MHz)
- Endurance:
- 100,000 program/erase cycles (-40°C to +85°C)
- 10,000 program/erase cycles (-40°C to +125°C)
- Data retention: 20 years
- Complies with full industrial temperature range
- Green (Pb/Halide-free/RoHS compliant) packaging options
- 8-lead SOIC (0.150" wide and 0.208" wide)
- 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
- 8-ball Ultra-thin UBCA (6 x 6 x 0.6mm)
- Die in Wafer Form (contact factory for availability)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 5
5 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.9056 | $ 2.91 |
| 10+ | $ 2.4779 | $ 24.78 |
| 30+ | $ 2.2088 | $ 66.26 |
| 100+ | $ 1.9334 | $ 193.34 |
| 500+ | $ 1.8106 | $ 905.30 |
| 1,000+ | $ 1.7561 | $ 1756.10 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | RENESAS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 30ms@(2KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.5ms | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | RENESAS | |
| Packaging | SOIC-8 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Mbit | |
| Voltage - Supply | 1.65V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 85MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 30ms@(2KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.5ms | |
| Standby Supply Current | 25uA | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Single 1.65 V
- 3.6 V supply
- Serial Peripheral Interface (SPI) compatible
- Supports SPI modes 0 and 3
- Supports RapidS™ operation
- Continuous read capability through entire array
- Up to 85 MHz
- Low-power read option up to 15 MHz
- Clock-to-output time (tV) of 6 ns maximum
- User-configurable page size
- 256 bytes per page
- 264 bytes per page (default)
- Page size can be factory pre-configured for 256 bytes
- Two fully independent SRAM data buffers (256/264 bytes)
- Allows receiving data while reprogramming the main memory array
- Flexible programming options
- Byte/Page Program (1 to 256/264 bytes) directly into main memory
- Buffer Write
- Buffer to Main Memory Page Program
- Flexible erase options
- Page Erase (256/264 bytes)
- Block Erase (2 kB)
- Sector Erase (64 kB)
- Chip Erase (4 Mbits)
- Program and Erase Suspend/Resume
- Advanced hardware and software data protection features
- Individual sector protection
- Individual sector lockdown to make any sector permanently read-only
- 128-byte, One-Time Programmable (OTP) Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
- Hardware and software controlled reset options
- JEDEC Standard Manufacturer and Device ID Read
- Low-power dissipation
- 400 nA Ultra-Deep Power-Down current (typical)
- 3 µA Deep Power-Down current (typical)
- 25 µA Standby current (typical)
- 7mA Active Read current (typical @ 15 MHz)
- Endurance:
- 100,000 program/erase cycles (-40°C to +85°C)
- 10,000 program/erase cycles (-40°C to +125°C)
- Data retention: 20 years
- Complies with full industrial temperature range
- Green (Pb/Halide-free/RoHS compliant) packaging options
- 8-lead SOIC (0.150" wide and 0.208" wide)
- 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
- 8-ball Ultra-thin UBCA (6 x 6 x 0.6mm)
- Die in Wafer Form (contact factory for availability)
C5334568 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| AT45DB041E-SHN2B-T | RENESAS | Similar | SOIC-8 | 10 | $ 3.1526 | ||
| AT45DB021E-SHN-T | RENESAS | Similar | SOIC-8 | 1 | $ 2.9365 | ||
| AT45DB021E-SHN-B | RENESAS | Similar | SOIC-8 | 6 | $ 3.2844 | ||
| AT45DB021E-SSHN-B | RENESAS | Similar | SOIC-8 | 49 | $ 2.4886 | ||
| AT45DB021E-SSHN-T | RENESAS | Similar | SOIC-8 | 257 | $ 0.4738 |