Infineon AUIRFR2407TRL
| Produttore | |
| Cod. Prod. | AUIRFR2407TRL |
| Cod. LCSC | C533325 |
| Imballo | DPAK |
| Numero Cliente | |
| Attr. chiave | 110W 75V 42A 26mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon AUIRFR2407TRL |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
This automotive-grade stripe planar HEXFET power MOSFET utilizes the latest process technology to achieve low on-resistance per unit silicon area. Combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, this advantage provides designers with an extremely efficient and reliable device suitable for automotive and a wide range of other applications.
Caratteristiche
- Advanced planar technology
- Low on-resistance
- Dynamic dV/dT rating
- 175°C operating temperature
- Fast switching
- Full avalanche rated
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 42A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
This automotive-grade stripe planar HEXFET power MOSFET utilizes the latest process technology to achieve low on-resistance per unit silicon area. Combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, this advantage provides designers with an extremely efficient and reliable device suitable for automotive and a wide range of other applications.
Caratteristiche
- Advanced planar technology
- Low on-resistance
- Dynamic dV/dT rating
- 175°C operating temperature
- Fast switching
- Full avalanche rated
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533325 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

