Infineon AUIRF1018ESTRL
| Produttore | |
| Cod. Prod. | AUIRF1018ESTRL |
| Cod. LCSC | C533215 |
| Imballo | D2PAK |
| Numero Cliente | |
| Attr. chiave | 60V 79A 110W 7.1mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs |
| Scheda Tecnica | Infineon AUIRF1018ESTRL |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 79A | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 7.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 270pF |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 79A | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 7.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide variety of other applications.
Caratteristiche
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature
- Lead-free, RoHS compliant
- AEC-Q101 qualified
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.3664 | $ 3.37 |
| 200+ | $ 1.3027 | $ 260.54 |
| 500+ | $ 1.258 | $ 629.00 |
| 800+ | $ 1.2348 | $ 987.84 |
Package Standard800/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 79A | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 7.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 270pF |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 79A | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 7.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrizione
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide variety of other applications.
Caratteristiche
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533215 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| NCE6080D | NCE | Simili | TO-263-2L | 90 | $ 0.6743 | ||
| AP80N06DH | ALLPOWER | Simili | TO-263 | 210 | $ 0.8385 | ||
| SE6880 | SINO-IC | Simili | TO-263 | 5 | $ 0.3652 | ||
| HYG060N08NS1B | HUAYI | Simili | TO-263-2 | 59 | $ 0.5004 | ||
| HYG065N07NS1B | HUAYI | Simili | TO-263-2L | 3,968 | $ 0.5015 |