HXY MOSFET BSZ0910LSATMA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	BSZ0910LSATMA1-HXY
LCSC Part #	C53263388
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	46W 30V 90A 1.6V 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET BSZ0910LSATMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	277pF
Pd - Power Dissipation	46W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	90A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	209pF
Number	1 N-channel
Input Capacitance(Ciss)	2.088nF
Gate Charge(Qg)	20nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 98

98 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.4126$ 0.3301	$ 0.33
10+	$ 0.3269$ 0.2616	$ 2.62
30+	$ 0.2904$ 0.2324	$ 6.97
100+	$ 0.2444$ 0.1956	$ 19.56
500+	$ 0.2238$ 0.1791	$ 89.55
1,000+	$ 0.2111$ 0.1689	$ 168.90
Standard Packaging5000/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	277pF
Pd - Power Dissipation	46W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	90A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	209pF
Number	1 N-channel
Input Capacitance(Ciss)	2.088nF
Gate Charge(Qg)	20nC@4.5V
Vgs	±20V
Type	N-Channel