HXY MOSFET NTD4965NT4G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NTD4965NT4G-HXY
LCSC Part #	C53263321
Packaging	TO-252-2L
Customer #
Key Attributes	62.5W 30V 120A 1.7V 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NTD4965NT4G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 98

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Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.4284	$ 0.43
10+	$ 0.3396	$ 3.40
30+	$ 0.3015	$ 9.05
100+	$ 0.2539	$ 25.39
500+	$ 0.2317	$ 115.85
1,000+	$ 0.219	$ 219.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel