HXY MOSFET AONR36328

Manufacturer	HXY MOSFETAsian Brands
MPN	AONR36328
LCSC Part #	C53263163
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	37.5W 30V 35A 2.5V 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET AONR36328

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 90

90 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.1809$ 0.1448	$ 0.72
50+	$ 0.1433$ 0.1147	$ 5.74
150+	$ 0.1272$ 0.1018	$ 15.27
500+	$ 0.1071$ 0.0857	$ 42.85
2,500+	$ 0.0981$ 0.0785	$ 196.25
5,000+	$ 0.0928$ 0.0743	$ 371.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	109pF
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel