HXY MOSFET FDD8876-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	FDD8876-HXY
LCSC Part #	C53263131
Packaging	TO-252-2L
Customer #
Key Attributes	41W 30V 60A 1.5V 7mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET FDD8876-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	41W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.9091$ 0.7273	$ 0.73
10+	$ 0.7378$ 0.5903	$ 5.90
30+	$ 0.6521$ 0.5217	$ 15.65
100+	$ 0.5664$ 0.4532	$ 45.32
500+	$ 0.5157$ 0.4126	$ 206.30
1,000+	$ 0.4887$ 0.3910	$ 391.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	41W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel