HXY MOSFET FDD6682_NL-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	FDD6682_NL-HXY
LCSC Part #	C53263121
Packaging	TO-252-2L
Customer #
Key Attributes	54W 30V 80A 1.6V 5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET FDD6682_NL-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.5374$ 1.2300	$ 1.23
10+	$ 1.2804$ 1.0244	$ 10.24
30+	$ 1.1392$ 0.9114	$ 27.34
100+	$ 0.9789$ 0.7832	$ 78.32
500+	$ 0.9091$ 0.7273	$ 363.65
1,000+	$ 0.8758$ 0.7007	$ 700.70
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel