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HXY MOSFET IPD50N03S207ATMA1-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IPD50N03S207ATMA1-HXY |
| LCSC Part # | C53263110 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 54W 30V 80A 1.6V 5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS |
| Datasheet |  HXY MOSFET IPD50N03S207ATMA1-HXY |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 200pF | |
| Pd - Power Dissipation | 54W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
In-Stock: 99
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5707$ 1.2566 | $ 1.26 |
| 10+ | $ 1.309$ 1.0472 | $ 10.47 |
| 30+ | $ 1.1646$ 0.9317 | $ 27.95 |
| 100+ | $ 1.0012$ 0.8010 | $ 80.10 |
| 500+ | $ 0.9282$ 0.7426 | $ 371.30 |
| 1,000+ | $ 0.8964$ 0.7172 | $ 717.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 200pF | |
| Pd - Power Dissipation | 54W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 11.1nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |