HXY MOSFET FDD6676S-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	FDD6676S-HXY
LCSC Part #	C53263105
Packaging	TO-252-2L
Customer #
Key Attributes	54W 30V 80A 1.6V 5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET FDD6676S-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.063$ 0.8504	$ 0.85
10+	$ 0.8853$ 0.7083	$ 7.08
30+	$ 0.787$ 0.6296	$ 18.89
100+	$ 0.6775$ 0.5420	$ 54.20
500+	$ 0.6283$ 0.5027	$ 251.35
1,000+	$ 0.6061$ 0.4849	$ 484.90
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	200pF
Pd - Power Dissipation	54W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	180pF
Number	1 N-channel
Input Capacitance(Ciss)	1.16nF
Gate Charge(Qg)	11.1nC@4.5V
Vgs	±20V
Type	N-Channel