HXY MOSFET AONS36308

Manufacturer	HXY MOSFETAsian Brands
MPN	AONS36308
LCSC Part #	C53263059
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	30W 30V 60A 2.5V 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET AONS36308

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	498pF
Pd - Power Dissipation	30W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	41pF
RDS(on)	4.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	814pF
Gate Charge(Qg)	8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 65

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Qty	Unit Price	Total Amount
5+	$ 0.3299$ 0.2970	$ 1.49
50+	$ 0.2602$ 0.2342	$ 11.71
150+	$ 0.2303$ 0.2073	$ 31.10
500+	$ 0.1931$ 0.1738	$ 86.90
2,500+	$ 0.1765$ 0.1589	$ 397.25
5,000+	$ 0.1665$ 0.1499	$ 749.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	498pF
Pd - Power Dissipation	30W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	41pF
RDS(on)	4.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	814pF
Gate Charge(Qg)	8nC@4.5V
Vgs	±20V
Type	N-Channel