HXY MOSFET RS6E122BGTB1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RS6E122BGTB1-HXY
LCSC Part #	C53263058
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	187W 30V 150A 2.5V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RS6E122BGTB1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.2645$ 1.0116	$ 1.01
10+	$ 1.0519$ 0.8416	$ 8.42
30+	$ 0.9361$ 0.7489	$ 22.47
100+	$ 0.806$ 0.6448	$ 64.48
500+	$ 0.7473$ 0.5979	$ 298.95
1,000+	$ 0.7203$ 0.5763	$ 576.30
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel