HXY MOSFET SISA10BDN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SISA10BDN-T1-GE3-HXY
LCSC Part #	C53263055
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	31.7W 30V 100A 1.6V 2.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SISA10BDN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	499pF
Pd - Power Dissipation	31.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	430pF
RDS(on)	2.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.499nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 68

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Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.7124	$ 0.71
10+	$ 0.5776	$ 5.78
30+	$ 0.5109	$ 15.33
100+	$ 0.4443	$ 44.43
500+	$ 0.4046	$ 202.30
1,000+	$ 0.384	$ 384.00
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	499pF
Pd - Power Dissipation	31.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	430pF
RDS(on)	2.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.499nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel