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HXY MOSFET SIS472ADN-T1-GE3-HXY product image
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HXY MOSFET SIS472ADN-T1-GE3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SIS472ADN-T1-GE3-HXY
LCSC Part #
C53263048
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
37.5W 30V 35A 2.5V 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SIS472ADN-T1-GE3-HXY
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3078$ 0.2463$ 1.23
50+$ 0.2438$ 0.1951$ 9.76
150+$ 0.2164$ 0.1732$ 25.98
500+$ 0.1822$ 0.1458$ 72.90
2,500+$ 0.167$ 0.1336$ 334.00
5,000+$ 0.1578$ 0.1263$ 631.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(3x3)
Output Capacitance(Coss)131pF
Pd - Power Dissipation37.5W
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)109pF
Number1 N-channel
Input Capacitance(Ciss)940pF
Gate Charge(Qg)9.8nC@4.5V
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece