HXY MOSFET RS1E281BNTB1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RS1E281BNTB1-HXY
LCSC Part #	C53263040
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	187W 30V 150A 2.5V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RS1E281BNTB1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel

In-Stock: 98

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Qty	Unit Price	Total Amount
1+	$ 0.833$ 0.6664	$ 0.67
10+	$ 0.6759$ 0.5408	$ 5.41
30+	$ 0.5966$ 0.4773	$ 14.32
100+	$ 0.5189$ 0.4152	$ 41.52
500+	$ 0.4728$ 0.3783	$ 189.15
1,000+	$ 0.449$ 0.3592	$ 359.20
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel