HXY MOSFET IPD040N03LGATMA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPD040N03LGATMA1-HXY
LCSC Part #	C53263031
Packaging	TO-252-2L
Customer #
Key Attributes	62.5W 30V 120A 1.7V 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPD040N03LGATMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 195

195 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.295$ 0.2508	$ 1.25
50+	$ 0.2327$ 0.1978	$ 9.89
150+	$ 0.2059$ 0.1751	$ 26.27
500+	$ 0.1726$ 0.1468	$ 73.40
2,500+	$ 0.1578$ 0.1342	$ 335.50
5,000+	$ 0.1489$ 0.1266	$ 633.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	850pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
RDS(on)	3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	85pF
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Vgs	±20V
Type	N-Channel