HXY MOSFET NTMFS4C028NT1G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NTMFS4C028NT1G-HXY
LCSC Part #	C53263022
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	115W 30V 120A 1.6V 2.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NTMFS4C028NT1G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	480pF
Pd - Power Dissipation	115W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	340pF
Number	1 N-channel
Input Capacitance(Ciss)	2.218nF
Gate Charge(Qg)	24nC@15V
Vgs	±20V
Type	N-Channel

In-Stock: 90

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Qty	Unit Price	Total Amount
5+	$ 0.2847$ 0.2278	$ 1.14
50+	$ 0.2255$ 0.1804	$ 9.02
150+	$ 0.2002$ 0.1602	$ 24.03
500+	$ 0.1685$ 0.1348	$ 67.40
2,500+	$ 0.1544$ 0.1236	$ 309.00
5,000+	$ 0.146$ 0.1168	$ 584.00
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	480pF
Pd - Power Dissipation	115W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	340pF
Number	1 N-channel
Input Capacitance(Ciss)	2.218nF
Gate Charge(Qg)	24nC@15V
Vgs	±20V
Type	N-Channel