HXY MOSFET DMN3010LSS-13-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DMN3010LSS-13-HXY
LCSC Part #	C53263008
Packaging	SOP-8
Customer #
Key Attributes	1.5W 30V 18A 1.5V 5.5mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DMN3010LSS-13-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	1.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	18A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	5.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel

In-Stock: 80

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Qty	Unit Price	Total Amount
5+	$ 0.2539$ 0.2286	$ 1.14
50+	$ 0.2012$ 0.1811	$ 9.06
150+	$ 0.1785$ 0.1607	$ 24.11
500+	$ 0.1503$ 0.1353	$ 67.65
3,000+	$ 0.1377$ 0.1240	$ 372.00
6,000+	$ 0.1302$ 0.1172	$ 703.20
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	163pF
Pd - Power Dissipation	1.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	18A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	131pF
RDS(on)	5.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.317nF
Gate Charge(Qg)	12.6nC
Vgs	±20V
Type	N-Channel