HXY MOSFET SISA14DN-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SISA14DN-T1-GE3-HXY
LCSC Part #	C53262980
Packaging	DFN-8L(3x3)
Customer #
Key Attributes	62.5W 30V 60A 2.5V 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SISA14DN-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 48

48 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.4362$ 0.3708	$ 0.37
10+	$ 0.3451$ 0.2934	$ 2.93
30+	$ 0.306$ 0.2601	$ 7.80
100+	$ 0.2572$ 0.2187	$ 21.87
500+	$ 0.236$ 0.2006	$ 100.30
1,000+	$ 0.223$ 0.1896	$ 189.60
Standard Packaging5000/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(3x3)
Output Capacitance(Coss)	400pF
Pd - Power Dissipation	62.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Vgs	±20V
Type	N-Channel