HXY MOSFET RS1E280BNTB-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	RS1E280BNTB-HXY
LCSC Part #	C53262973
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	187W 30V 150A 2.5V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET RS1E280BNTB-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel

In-Stock: 98

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Qty	Unit Price	Total Amount
1+	$ 0.6394$ 0.5116	$ 0.51
10+	$ 0.5189$ 0.4152	$ 4.15
30+	$ 0.4586$ 0.3669	$ 11.01
100+	$ 0.3999$ 0.3200	$ 32.00
500+	$ 0.3634$ 0.2908	$ 145.40
1,000+	$ 0.3443$ 0.2755	$ 275.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	340pF
Pd - Power Dissipation	187W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC
Vgs	±20V
Type	N-Channel