HXY MOSFET FDP100N10-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	FDP100N10-HXY
LCSC Part #	C53262917
Packaging	TO-220C
Customer #
Key Attributes	100W 100V 70A 2.5V 8.5mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET FDP100N10-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	451pF
Pd - Power Dissipation	100W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	70A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	8.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	12.9pF
Number	1 N-channel
Input Capacitance(Ciss)	1.368nF
Gate Charge(Qg)	31.3nC@50V
Vgs	±20V
Type	N-Channel

In-Stock: 50

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Qty	Unit Price	Total Amount
1+	$ 0.4305	$ 0.43
10+	$ 0.4207	$ 4.21
50+	$ 0.4142	$ 20.71
100+	$ 0.4093	$ 40.93
Standard Packaging50/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	451pF
Pd - Power Dissipation	100W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	70A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
RDS(on)	8.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	12.9pF
Number	1 N-channel
Input Capacitance(Ciss)	1.368nF
Gate Charge(Qg)	31.3nC@50V
Vgs	±20V
Type	N-Channel