HXY MOSFET SIR846ADP-T1-GE3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SIR846ADP-T1-GE3-HXY
LCSC Part #	C53262896
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	97W 100V 75A 1.6V 6.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SIR846ADP-T1-GE3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	736pF
Pd - Power Dissipation	97W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	75A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	2.04pF
Number	1 N-channel
Input Capacitance(Ciss)	2.944nF
Gate Charge(Qg)	39.4nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.6736$ 1.3389	$ 1.34
10+	$ 1.4261$ 1.1409	$ 11.41
30+	$ 1.2707$ 1.0166	$ 30.50
100+	$ 1.1104$ 0.8884	$ 88.84
500+	$ 1.0391$ 0.8313	$ 415.65
1,000+	$ 1.0073$ 0.8059	$ 805.90
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	736pF
Pd - Power Dissipation	97W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	75A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	2.04pF
Number	1 N-channel
Input Capacitance(Ciss)	2.944nF
Gate Charge(Qg)	39.4nC@10V
Vgs	±20V
Type	N-Channel