HXY MOSFET SI7460DP-T1-E3-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	SI7460DP-T1-E3-HXY
LCSC Part #	C53262872
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	89W 60V 65A 1.6V 8mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET SI7460DP-T1-E3-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	370pF
Pd - Power Dissipation	89W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	65A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	20pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	930pF
Gate Charge(Qg)	19nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.9885$ 0.7908	$ 0.79
10+	$ 0.8013$ 0.6411	$ 6.41
30+	$ 0.7092$ 0.5674	$ 17.02
100+	$ 0.6156$ 0.4925	$ 49.25
500+	$ 0.5617$ 0.4494	$ 224.70
1,000+	$ 0.5331$ 0.4265	$ 426.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	370pF
Pd - Power Dissipation	89W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	65A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	20pF
RDS(on)	8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	930pF
Gate Charge(Qg)	19nC@10V
Vgs	±20V
Type	N-Channel