HXY MOSFET NVMFS5C670NLT1G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NVMFS5C670NLT1G-HXY
LCSC Part #	C53262859
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	108W 60V 80A 3V 6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET NVMFS5C670NLT1G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	286pF
Pd - Power Dissipation	108W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.1995$ 0.9596	$ 0.96
10+	$ 0.998$ 0.7984	$ 7.98
30+	$ 0.8885$ 0.7108	$ 21.32
100+	$ 0.7648$ 0.6119	$ 61.19
500+	$ 0.7092$ 0.5674	$ 283.70
1,000+	$ 0.6839$ 0.5472	$ 547.20
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	286pF
Pd - Power Dissipation	108W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Vgs	±20V
Type	N-Channel