HXY MOSFET DMT67M8LPSW-13-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	DMT67M8LPSW-13-HXY
LCSC Part #	C53262852
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	73.5W 60V 100A 2.9V 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET DMT67M8LPSW-13-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	773pF
Pd - Power Dissipation	73.5W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.9V
Reverse Transfer Capacitance (Crss@Vds)	46.8pF
RDS(on)	3.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.673nF
Gate Charge(Qg)	28.5nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 0.695$ 0.5560	$ 0.56
10+	$ 0.5633$ 0.4507	$ 4.51
30+	$ 0.4982$ 0.3986	$ 11.96
100+	$ 0.4332$ 0.3466	$ 34.66
500+	$ 0.3935$ 0.3148	$ 157.40
1,000+	$ 0.3745$ 0.2996	$ 299.60
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	773pF
Pd - Power Dissipation	73.5W
Drain to Source Voltage	60V
Configuration	Standalone
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.9V
Reverse Transfer Capacitance (Crss@Vds)	46.8pF
RDS(on)	3.7mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.673nF
Gate Charge(Qg)	28.5nC@10V
Vgs	±20V
Type	N-Channel