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HUASHUO HSBG3132

Manufacturer
HUASHUOAsian Brands
MPN
HSBG3132
LCSC Part #
C53243977
Packaging
DFN1006-3
Customer #
Key Attributes
30V 1.5A 800mV 1.2W 220mΩ@4.5V 1 N-channel N-Channel DFN1006-3 Single FETs, MOSFETs
DatasheetHUASHUO HSBG3132
In-Stock: 8,520
8,520 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0376$ 0.75
200+$ 0.0298$ 5.96
600+$ 0.0259$ 15.54
2,000+$ 0.023$ 46.00
10,000+$ 0.0207$ 207.00
20,000+$ 0.0195$ 390.00
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingDFN1006-3
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)1.5A
Output Capacitance(Coss)12pF
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.2W
RDS(on)220mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)16pF
Gate Charge(Qg)600pC@4.5V
TypeN-Channel
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Introduction

AI Translation

HSBG3132 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance and efficiency for most low-power switching and load switch applications. This product complies with RoHS and green product requirements, and has passed comprehensive functional reliability qualification.

Features

AI Translation
  • Small single switch
  • Load switch
  • ESD-protected gate
  • Low gate threshold voltage