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HGSEMI AT24C256MT/TR-HG product image
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HGSEMI AT24C256MT/TR-HGRoHS

Manufacturer
HGSEMIAsian Brands
MPN
AT24C256MT/TR-HG
LCSC Part #
C53200142
Packaging
TSSOP-8
Customer #
Key Attributes
1.7V~5.5V 256Kbit 3.4MHz I2C TSSOP-8 Memory (ICs) RoHS
Datasheetpdf iconHGSEMI AT24C256MT/TR-HG
In-Stock: 4,855
4,855 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2996$ 1.50
50+$ 0.2365$ 11.83
150+$ 0.2095$ 31.43
500+$ 0.1758$ 87.90
2,500+$ 0.1607$ 401.75
5,000+$ 0.1517$ 758.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerHGSEMI
PackagingTSSOP-8
Voltage - Supply1.7V~5.5V
Memory Size256Kbit
Operating temperature-40℃~+125℃
Clock Frequency3.4MHz
Data Retention - TDR (Year)200 Years
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Page write protection function
Write Cycle Time(tWC)5ms
Write Cycle Endurance10,000,000 Cycles
InterfaceI2C
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

AT24C256 is an I2C-compatible serial EEPROM device. It contains a 256 Kbit (32 Kbyte) memory array organized as 64-byte pages.

Features

AI Translation
  • Single supply voltage, supporting Fast-mode and High-speed mode
  • Minimum operating voltage down to 1.7V
  • 400 kHz/1 MHz/3.4 MHz clock support across 1.7V to 5.5V voltage range
  • Low-power CMOS technology
  • Read current 0.3mA (5.5V, 400 kHz, typical)
  • Schmitt trigger with filtered inputs for noise suppression
  • Transparent ECC over each group of four bytes, corrects 1-bit errors
  • Write protection for entire memory array
  • Additional writable lockable page (identification page)
  • Additional 128-bit serial number
  • Sequential and random read capability
  • 64-byte page write mode with partial page write support
  • Self-timed write cycle (5ms max)
  • High reliability
  • Endurance: 10 million write cycles
  • Data retention: 200 years
  • HBM: 6 kV
  • Latch-up immunity: ±200 mA (25°C)
  • Packages: DIP-8, SOP-8, TSSOP-8, MSOP-8, DFN-8, SOT-23-5