LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HGSEMI AT24C02MT/TR-HG product image
  • AT24C02MT/TR-HG thumbnail 1
  • AT24C02MT/TR-HG thumbnail 2
  • AT24C02MT/TR-HG thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HGSEMI AT24C02MT/TR-HGRoHS

Manufacturer
HGSEMIAsian Brands
MPN
AT24C02MT/TR-HG
LCSC Part #
C53200138
Packaging
TSSOP-8
Customer #
Key Attributes
2Kbit 1.7V~5.5V 1MHz I2C TSSOP-8 Memory (ICs) RoHS
Datasheetpdf iconHGSEMI AT24C02MT/TR-HG
In-Stock: 4,760
4,760 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0802$ 0.40
50+$ 0.0636$ 3.18
150+$ 0.0554$ 8.31
500+$ 0.0492$ 24.60
2,500+$ 0.0442$ 110.50
5,000+$ 0.0418$ 209.00
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerHGSEMI
PackagingTSSOP-8
Memory Size2Kbit
Voltage - Supply1.7V~5.5V
Operating temperature-40℃~+125℃
Clock Frequency1MHz
Data Retention - TDR (Year)100 Years
FeaturesHardware write protection function;Built-in power-on reset (POR);Noise suppression function
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceI2C
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

AT24C02 is an I²C-compatible serial EEPROM device. It contains a 2K-bit (256-byte) memory array organized in 8-byte pages.

Features

AI Translation
  • Single supply voltage and fast mode
  • 400kHz/1MHz clock frequency support over 1.7V to 5.5V supply range
  • Low-power CMOS technology
  • Read current 0.2mA (400kHz, typical)
  • Write current 0.8mA (400kHz, typical)
  • Schmitt trigger with filtered inputs for noise suppression
  • Sequential and random read modes
  • Page write mode with partial page write support
  • Write protection for entire memory array
  • Self-timed write cycle (5ms max)
  • High reliability
  • Endurance: 1,000,000 write cycles
  • Data retention: 100 years
  • ESD HBM: 4 kV
  • Latch-up immunity: ±200mA (25°C)
  • Packages: DIP8, SOP8, TSSOP8, DFN-8 3×3, MSOP8, SOT-23-5, DFN-8 2×2