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ElecSuper NX3008NBKW,115(ES) product image
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ElecSuper NX3008NBKW,115(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
NX3008NBKW,115(ES)
LCSC Part #
C53199118
Packaging
SOT-323
Customer #
Key Attributes
350mW 30V 500mA 1.2V 504mΩ@10V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper NX3008NBKW,115(ES)
In-Stock: 660
660 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0243$ 0.49
200+$ 0.0191$ 3.82
600+$ 0.0161$ 9.66
3,000+$ 0.0144$ 43.20
9,000+$ 0.0129$ 116.10
21,000+$ 0.012$ 252.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Output Capacitance(Coss)7pF
Pd - Power Dissipation350mW
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)504mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)18pF
Gate Charge(Qg)1.7nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NX3008NBKW,115(ES) is an N-channel enhancement mode MOSFET. It employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NX3008NBKW,115(ES) is lead-free.

Features

AI Translation
  • 30V, RDS(on) = 504mΩ (typical) @ VGS = 10V; RDS(on) = 673mΩ (typical) @ VGS = 4.5V
  • High-density cell design for low RDS(on)
  • Material: Halogen-free
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current
  • ESD protection - HBM: 2kV

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion