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ElecSuper DMG2305UX-13(ES) product image
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ElecSuper DMG2305UX-13(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
DMG2305UX-13(ES)
LCSC Part #
C53199116
Packaging
SOT-23
Customer #
Key Attributes
800mW 20V 2A 620mV 82mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper DMG2305UX-13(ES)
In-Stock: 1,940
1,940 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0383$ 0.77
200+$ 0.0305$ 6.10
600+$ 0.0266$ 15.96
3,000+$ 0.0237$ 71.10
9,000+$ 0.0214$ 192.60
21,000+$ 0.0202$ 424.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)35pF
Pd - Power Dissipation800mW
Drain to Source Voltage20V
Configuration-
Current - Continuous Drain(Id)2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))620mV
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)82mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)185pF
Gate Charge(Qg)2.2nC
Vgs±12V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This device is a P-channel enhancement-mode MOSFET that employs advanced trench technology and design to deliver excellent on-resistance at low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • RDS(ON) = 118 mΩ (typ.) at VGS = -2.5 V
  • RDS(ON) = 180 mΩ (typ.) at VGS = -1.8 V
  • Fast switching
  • High-density cell design for low on-resistance
  • Halogen-free material
  • Reliable and robust
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management
  • DC/DC conversion